Valve assemblies for use with a reactive precursor in semiconductor processing

ABSTRACT

The invention includes chemical vapor deposition methods, including atomic layer deposition, and valve assemblies for use with a reactive precursor in semiconductor processing. In one implementation, a chemical vapor deposition method includes positioning a semiconductor substrate within a chemical vapor deposition chamber. A first deposition precursor is fed to a remote plasma generation chamber positioned upstream of the deposition chamber, and a plasma is generated therefrom within the remote chamber and effective to form a first active deposition precursor species. The first species is flowed to the deposition chamber. During the flowing, flow of at least some of the first species is diverted from entering the deposition chamber while feeding and maintaining plasma generation of the first deposition precursor within the remote chamber. At some point, diverting is ceased while feeding and maintaining plasma generation of the first deposition precursor within the remote chamber. Other aspects and implementations are contemplated.

TECHNICAL FIELD

[0001] This invention relates to chemical vapor deposition methods,including atomic layer deposition, and to valve assemblies for use witha reactive precursor in semiconductor processing.

BACKGROUND OF THE INVENTION

[0002] Semiconductor processing in the fabrication of integratedcircuitry typically includes the deposition of layers on semiconductorsubstrates. Exemplary processes include physical vapor deposition (PVD)and chemical vapor deposition (CVD). In the context of this document,“CVD” includes any process, whether existing or yet-to-be developed,where one or more vaporized chemicals is fed as a deposition precursorfor reaction and adherence to a substrate surface. By way of exampleonly, one such CVD process includes atomic layer deposition (ALD). Withtypical ALD, successive mono-atomic layers are adsorbed to a substrateand/or reacted with the outer layer on the substrate, typically bysuccessive feeding of different precursors to the substrate surface.

[0003] Chemical vapor depositions can be conducted within chambers orreactors which retain a single substrate upon a wafer holder orsusceptor. One or more precursor gasses are typically provided to ashower head within the chamber which is intended to uniformly providethe reactant gasses substantially homogeneously over the outer surfaceof the substrate. The precursors react or otherwise manifest in adeposition of a suitable layer atop the substrate. Plasma enhancementmay or may not be utilized, and either directly within the chamber orremotely therefrom.

[0004] In certain chemical vapor deposition processes, including ALD,precursors are pulsed or otherwise intermittently injected into thereactor for reaction and/or deposition onto a substrate. In many cases,it is highly desirable to turn the individual precursor flows on and offvery quickly. For example, some deposition processes utilize plasmageneration of a precursor in a chamber remote from the depositionchamber. As the precursor leaves the remote plasma generation chamber,such typically converts to a short lived, non-plasma desired activestate intended to be maintained for reaction in the deposition chamber.Yet plasma generation in the remote chamber is very pressure dependent,and the plasma typically ceases in the remote chamber whenswitching/pulsing the active species flow to the chamber. Accordingly,such process are expected to utilize pulsed remote plasma generation,and which may not be practical.

[0005] The invention was motivated in overcoming the above-describeddrawbacks, although it is in no way so limited. The invention is onlylimited by the accompanying claims as literally worded withoutinterpretative or other limiting reference to the specification ordrawings, and in accordance with the doctrine of equivalents.

SUMMARY

[0006] The invention includes chemical vapor deposition methods,including atomic layer deposition, and valve assemblies for use with areactive precursor in semiconductor processing. In one implementation, achemical vapor deposition method includes positioning a semiconductorsubstrate within a chemical vapor deposition chamber. A first depositionprecursor is fed to a remote plasma generation chamber positionedupstream of the deposition chamber, and a plasma is generated therefromwithin the remote chamber and effective to form a first activedeposition precursor species. The first species is flowed to thedeposition chamber. During the flowing, flow of at least some of thefirst species is diverted from entering the deposition chamber whilefeeding and maintaining plasma generation of the first depositionprecursor within the remote chamber. At some point, diverting is ceasedwhile feeding and maintaining plasma generation of the first depositionprecursor within the remote chamber.

[0007] In one implementation, a chemical vapor deposition methodincludes positioning a semiconductor substrate within a chemical vapordeposition chamber. A first deposition precursor is fed to the chamberthrough at least a portion of a rotatable cylindrical mass of a valveassembly. During the flowing, flow of at least some of the firstdeposition precursor is diverted from entering the deposition chamber byrotating the cylindrical mass in a first rotational direction. At somepoint while diverting is occurring, the cylindrical mass is rotated inthe first rotational direction effective to cease said diverting.

[0008] In one implementation, a valve assembly for a reactive precursorto be used in semiconductor processing includes a valve body having atleast one inlet and at least two outlets. The inlet is configured forconnection with a reactive precursor source. A first of the outlets isconfigured for connection with a feed stream to a semiconductorsubstrate processor chamber. A second of the outlets is configured fordiverting precursor flow away from said chamber. The valve body includesa first fluid passageway therein extending between the inlet and thefirst outlet. The valve body has a second fluid passageway extendingbetween the first fluid passageway and the second outlet. A controlplate and/or generally cylindrical mass is mounted for at least limitedrotation within the body proximate the first and second passageways.Such includes an arcuate region at least a portion of which is receivedwithin the first passageway. The arcuate region includes a first regionhaving an opening extending therethrough and which is positionable intoa first selected radial orientation to provide the inlet and the firstoutlet in fluid communication with one another through the firstpassageway while restricting flow to the second passageway. The arcuateregion includes a second region positionable into the first radialorientation to provide the inlet and second outlet in fluidcommunication through the first and second passageways while restrictingflow to the first outlet.

[0009] Other aspects and implementations are contemplated.

BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Preferred embodiments of the invention are described below withreference to the following accompanying drawings.

[0011]FIG. 1 is a diagrammatic illustration of a preferred embodimentimplementation of an aspect of the invention.

[0012]FIG. 2 is a diagrammatic sectional view taken through line 2-2 inFIG. 3 of a valve assembly in accordance with an aspect of theinvention, and in one operational orientation.

[0013]FIG. 3 is a sectional view taken through line 3-3 in FIG. 2.

[0014]FIG. 4 is a sectional view taken through line 4-4 in FIG. 5, andis of the FIG. 2 valve assembly in another operational orientation.

[0015]FIG. 5 is a sectional view taken through line 5-5 in FIG. 4.

[0016]FIG. 6 is a diagrammatic sectional view taken of an alternateembodiment valve assembly in accordance with an aspect of the invention,and in one operational orientation.

[0017]FIG. 7 is an enlarged sectional view taken through line 7-7 inFIG. 6.

[0018]FIG. 8 is an enlarged perspective view of a component of the FIG.6 valve assembly.

[0019]FIG. 9 is a diagrammatic sectional view of the FIG. 6 valveassembly in another operational orientation.

[0020]FIG. 10 is an enlarged sectional view taken through line 10-10 inFIG. 9.

[0021]FIG. 11 is an enlarged diagrammatic sectional view of the FIG. 6valve assembly in yet another operational orientation.

[0022]FIG. 12 is an enlarged diagrammatic sectional view of the FIG. 6valve assembly in still another operational orientation.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0023] This disclosure of the invention is submitted in furtherance ofthe constitutional purposes of the U.S. Patent Laws “to promote theprogress of science and useful arts” (Article 1, Section 8).

[0024] A first embodiment chemical vapor deposition method is describedinitially with reference to FIG. 1. Such depicts a chemical vapordeposition chamber 12 having a semiconductor substrate 14 positionedtherein. In the context of this document, the term “semiconductorsubstrate” or “semiconductive substrate” is defined to mean anyconstruction comprising semiconductive material, including, but notlimited to, bulk semiconductive materials such as a semiconductive wafer(either alone or in assemblies comprising other materials thereon), andsemiconductive material layers (either alone or in assemblies comprisingother materials). The term “substrate” refers to any supportingstructure, including, but not limited to, the semiconductive substratesdescribed above.

[0025] A remote plasma generation chamber 16 is positioned upstream ofdeposition chamber 12. Any existing or yet-to-be-developed remote plasmageneration is contemplated. Plasma generator 16 is fed by an inletstream 18 for feeding some suitable first deposition precursor thereto.A valve assembly 20 is depicted as being received intermediate plasmagenerator 16 and deposition chamber 12. An out-feed line 22 from plasmagenerator 16 is depicted as being an in-feed line to valve assembly 20.An out-feed line 24 feeds from valve assembly 24 to deposition chamber12, and another out-feed line 26 from valve assembly 20 is directed awayfrom feeding to deposition chamber 12. More than the illustrated valveassembly input and outputs are of course contemplated.

[0026] Valve assembly out-feed line 24 includes exemplary additionalin-feed lines 28 and 30. Such might be configured for providingadditional deposition precursors and/or purge gasses for separate orcombined flow with precursor from valve assembly 20 to depositionchamber 12. More or fewer downstream lines could be included, of course,as well as being directly provided to chamber 12 apart from stream 24.

[0027] The above-described and illustrated embodiment of FIG. 1 is butone example diagrammatic depiction usable in carrying out methodicalaspects of the invention. Any other processing in accordance with themethod claims as literally worded without limiting or interpretativereference to the specification or drawings is also of coursecontemplated.

[0028] With semiconductor substrate 14 positioned within depositionchamber 12, a first deposition precursor is fed to remote plasmageneration chamber 16. A plasma is generated therefrom within the remotechamber effectively to form a first active deposition precursor speciesfor provision to deposition chamber 12. Such first species is flowed todeposition chamber 12 via line 22, valve assembly 20 and line 24. Duringsuch flowing, the flow of at least some of the first species is divertedfrom entering deposition chamber 12, all while feeding and maintainingplasma generation of the first deposition precursor within the remotechamber. For example in the preferred embodiment, valve assembly 20 isoperated for diverting the flow of at least some of the first speciesinto line 26 as opposed to line 24. In the depicted preferredembodiment, diverting and ceasing thereof is controlled by a singlevalve assembly 20 located downstream of remote chamber 16 and upstreamof deposition chamber 12 as respects flow of the first depositionprecursor.

[0029] In one preferred embodiment, the diverting is effective to divertsubstantially all of the first species from entering the depositionchamber, and all while feeding and maintaining plasma generation of thefirst deposition precursor within the remote chamber. In other words inthe depicted preferred embodiment, line 24 is effectively completelyblocked off by valve assembly 20, with line 26 being provided in an openstate by valve assembly 20.

[0030] In one preferred embodiment, the method is atomic layerdeposition, with chamber 12 comprising an atomic layer depositionchamber. Flowing of the first species to chamber 12 and substrate 14therein is thereby effective to form a first monolayer on the substrate.In one preferred atomic layer deposition while such diverting isoccurring, for example into line 26, a purge gas is flowed to chamber12, and all while feeding and maintaining plasma generation of the firstdeposition precursor within the remote chamber. For example in the FIG.1 depicted embodiment, a purge gas could be flowed to chamber 12 via oneor both of lines 28 and 30. Further in one preferred atomic layerdeposition method in accordance with an aspect of the invention, afterflowing the purge gas and while diverting, a second deposition precursordifferent from the first deposition precursor is fed to depositionchamber 12 effective to form a second monolayer on the first monolayer,and all while feeding and maintaining plasma generation of the firstdeposition precursor within remote chamber 16. Again in the depictedexemplary embodiment, one or both of lines 28 and 30 could be utilizedfor the same. Further in accordance with one preferred atomic layerdeposition method implementation, after forming the second monolayer andwhile diverting, a purge gas (the same or different from thefirst-described purge gas) is flowed to the chamber all while feedingand maintaining plasma generation of the first deposition precursorwithin remote chamber 16.

[0031] Regardless, a chemical vapor deposition method in accordance withan aspect of the invention contemplates ceasing the diverting all whilefeeding and maintaining plasma generation of the first depositionprecursor within the remote chamber. In one embodiment where thediverting constitutes ceasing essentially all flow of the first speciesfrom entering the deposition chamber, such ceasing of the diverting willresult in the resumption of first species flow to chamber 12. In oneembodiment where such diverting does not constitute diversion of all ofthe first species from entering the deposition chamber, such ceasing ofthe diverting will result in an increased rate of flow of the firstspecies to chamber 12.

[0032] In one atomio layer deposition method in accordance with anaspect of the invention, another monolayer is effectively formed on thesubstrate. Such monolayer may be the same as the first monolayer. Suchmonolayer may be a third monolayer formed on the second monolayer, whichis the same as either the first or second monolayers, or some reactionproduct thereof.

[0033] In one considered aspect, the flowing of the first species todeposition chamber 12 can be considered as being at subatmosphericpressure, and comprises flow into a first passageway inlet, for examplethe inlet to line 24 exiting valve assembly 20. The diverting can beconsidered as comprising flow into a second passageway inlet, forexample into line 26 from valve assembly 20. In accordance with oneaspect of the invention, the method comprises maintaining pressure ofthe first inlet and the second inlet within 500 mTorr, and morepreferably within 100 mTorr, from one another during the flowing and thediverting. By way of example only, maintaining such pressure controlduring the entirety of the deposition process can facilitate maintenanceand control of plasma within remote generator 16. Yet in one preferredembodiment, the invention contemplates keeping the pressure of the firstinlet and the second inlet greater than 500 mTorr from one anotherduring the flowing and the diverting. Subatmospheric pressure within theexemplary system, as well as within plasma generator 16, is intended tobe maintained in the preferred embodiment primarily by line 26 and anout-feed line 32 from chamber 12 to the same or different subatmosphericvacuum pressure sources.

[0034] In one exemplary preferred embodiment, particularly where thediverting is of all flow from entering line 24, the diverting preferablytakes place over a time period sufficient to reduce the risk oftemporarily isolating vacuum pressure from plasma generator 16, whichmight otherwise cause extinguishing of the plasma. In one preferredembodiment, the diverting takes from 0.1 second to 1.0 second fromstaring the diverting of the first species to total diversion of thefirst species, and in another embodiment takes more than 1.0 second.

[0035] In one preferred embodiment, the diverting, for example utilizingvalve assembly 20, comprises rotating a cylindrical valve mass. In onepreferred embodiment, the diverting, for example utilizing valveassembly 20, comprises rotating a valve plate which may or may notconstitute a cylindrical valve mass. For example, and by way of exampleonly, such a valve plate might be square or rectangular incross-section, as opposed to being substantially round in at least onecross-section.

[0036] In one exemplary implementation, the diverting, for example usingvalve assembly 20, can comprise pivoting a valve flap, and in oneexemplary implementation can comprise straight linearly sliding of adiverting valve mass.

[0037] By way of example only, two exemplary valve assemblyconstructions usable in carrying out methodical aspects of the inventionare described with reference to FIGS. 2-12. The invention alsocontemplates valve assemblies for use in semiconductor processing withreactive precursors independent of any method claimed or describedherein. The respective method claim families and apparatus claimfamilies stand as literally worded, without reference to the other. Inother words, the concluding apparatus claims are not limited by themethod claims, nor are the concluding method claims limited by anyattribute of the apparatus claims, unless literal language appears insuch claims, and without any limiting or interpretative reference to thespecification or drawings.

[0038] An exemplary first embodiment semiconductor processing reactiveprecursor valve assembly is described with reference to FIGS. 2-5, andis indicated generally with reference numeral 36. FIGS. 2 and 3 depictassembly 36 in one exemplary operational configuration, while FIGS. 4and 5 depict assembly 36 in another operational configuration. Valveassembly 36 comprises a valve body 37 having at least one inlet 38 andat least two outlets 40 and 42. Inlet 38 is configured for connectionwith a reactive precursor source. First depicted outlet 40 is configuredfor connection with a feed stream to a semiconductor substrate processorchamber, and second outlet 42 is configured for diverting precursor flowaway from such chamber. Valve body 37 comprises a first fluid passageway44 therein extending between inlet 38 and first outlet 40. Valve body 37also comprises a second fluid passageway 46 extending between firstfluid passageway 44 and second outlet 42. In the depicted preferredembodiment, first passageway 44 extends in a straight axial line throughvalve body 37 from inlet 38 to outlet 40, and second passageway 46extends in a straight axial line through valve body 37 perpendicular toand from first passageway 44 to second outlet 42. Either might be of anyconstant or variable cross sectional shape, and/or size.

[0039] A control mass 48 is mounted for at least limited rotation withinbody 37 proximate the first and second passageways. In oneimplementation, control mass 48 is in the form of a control plate. Inone implementation, control mass 48 is in the form of a generallycylindrical mass. In the depicted preferred embodiment, control mass 48is in the form of both a control plate which is round and in the form ofa generally cylindrical mass. The depicted embodiment shows controlplate 48 mounted for rotation about a central axis 50 constituting a rodwithin body 37 which projects into control plate 48 for rotationalsupport. Accordingly and further in a preferred embodiment, the axis ofrotation 50 is oriented generally parallel with respect to first axialstraight line 44, and accordingly with respect to a direction ofprecursor flow proximate the valve plate. Valve/control plate 48 is alsoin the preferred embodiment mounted for 360° of rotation within body 37.

[0040] Control plate/cylindrical mass 48 includes an arcuate region 52(FIG. 3), at least a portion of which is received within firstpassageway 44. Arcuate region 52 includes a first region 54 having anopening 58 extending through the plate and positionable into a firstselected radial orientation 60 (as shown in FIGS. 2 and 3) to provideinlet 38 and first outlet 40 in fluid communication with one anotherthrough first passageway 44 while restricting flow to second passageway46. In the preferred depicted embodiment, first region 54 is configuredto block all fluid flow from entering second fluid passageway 46 when infirst selected radial orientation 60. Further in the preferredembodiment, opening 58 has a maximum cross-section which is at least aslarge of that of first passageway 44 proximate control plate 48. Furtherin the preferred embodiment, opening 58 has a cross sectional shapewhich is the same as that of that of first passageway 44 proximatecontrol plate 48 (i.e., circular). Alternately, the opening could have across sectional shape which is different (i.e., any of elliptical,square, rectangular, triangular, s-shaped, circular, etc.) from that ofthe first passageway (i.e., any different of elliptical, square,rectangular, triangular, s-shaped, circular, etc.). Preferably in suchinstance, the opening has a maximum cross-section which is at least aslarge of that of the first passageway proximate the control plate.

[0041] Arcuate region 52 includes a second region 56 positionable intofirst radial orientation 60 (FIGS. 4 and 5) to provide inlet 38 andsecond outlet 42 in fluid communication with one another through firstpassageway 44 and second passageway 46 while restricting flow to firstoutlet 40. In the depicted preferred embodiment, second region 56 isconfigured to block substantially all fluid flow to first outlet 40 whenin the first selected radial orientation 60. In the depicted preferredembodiment, second region 56 includes an arcuate surface 62 (FIG. 4)configured to direct fluid flow 90° from a flow direction to plate 48. Aflat surface 64 is connected with arcuate surface 62 and extends tosecond passageway 46 when in first radial position 60 (FIGS. 4 and 5).In the depicted preferred embodiment, second region 56 does not includea hole extending through plate 48.

[0042] As shown, arcuate region 52 is in the form of an annulus,including a plurality of alternating first and second regions 54 and 56.At least three of the first regions and at least three of the secondregions are included in one preferred embodiment.

[0043] Another exemplary embodiment semiconductor processing reactiveprecursor valve assembly 70 is depicted in various operational states inFIGS. 6-12. Assembly 70 includes a valve body 71 having at least firstand second inlets 72, 73, and at least two outlets 74, 75. First andsecond inlets 72, 73 are configured for connection with distinct gassources at least one of which is a deposition precursor. A first of theoutlets, for example outlet 74, is configured for connection with a feedstream to a semiconductor substrate processor chamber. A second of theoutlets, for example outlet 75, is configured for diverting gas flowaway from such chamber. In the depicted preferred embodiment, first andsecond inlet 72, 73 to valve body 71 are opposed 180° from one another,as are first and second outlets 74, 75. Further, first and second inlets72, 73 to valve body 71 are oriented at 90° from first and secondoutlets 74, 75 from body 71.

[0044] A generally cylindrical mass 76 is mounted for at least limitedrotation within body 71. Such comprises a first longitudinal portion 77and a second longitudinal portion. 78 proximate thereto (FIGS. 6 and 8).In the depicted preferred embodiment, the first and second longitudinalportions are substantially mirror images of one another, with generallycylindrical mass 76 comprising two overlapping half cylindrical-shapedsections.

[0045] First longitudinal portion 77 is configured to provide firstinlet 72 in fluid communication with first outlet 74 when in a firstselected radial orientation (i.e., that radial orientation depicted inFIGS. 6 and 7). First longitudinal portion 77 is also configured toprovide first inlet 72 in fluid communication with second outlet 75 whenin a second selected radial orientation (i.e., as shown in FIGS. 9 and10).

[0046] Further, second longitudinal portion 78 is configured to providesecond inlet 73 in fluid communication with first outlet 74 when in thesecond selected radial orientation (i.e., that of FIGS. 9 and 10).Second longitudinal portion 78 is also configured to provide secondinlet 73 in fluid communication with second outlet 75 when in the firstselected radial orientation (i.e., FIGS. 6 and 7).

[0047]FIGS. 11 and 12 diagrammatically illustrate respective third andfourth selected radial orientations. As shown in the exemplary thirdradial orientation (FIG. 11), first longitudinal portion 77 isconfigured to provide first inlet 72 in fluid communication with bothfirst and second outlets 74, 75. Further, second longitudinal portion 78is configured to provide second inlet 73 in fluid communication withboth first and second outlets 74, 75 in the third selected radialorientation. The same relationships exist in the FIG. 12 fourth selectedradial orientation, which is 180° from the third selected radialorientation.

[0048] The above-described structures are, of course, usable with orwithout remote plasma generation. Further, the rotational speed, size,shape and placement of the respective inlet and outlet openings can beused to determine the duty cycle and pulse length of the various gason/off states in the various embodiments.

[0049] Additional methods are contemplated in accordance with aspects ofthe invention. In one implementation, an atomic layer deposition methodincludes positioning a semiconductor substrate within an atomic layerdeposition chamber. A first deposition precursor is fed to a remoteplasma generation chamber positioned upstream of the deposition chamberand a plasma is generated therefrom within the remote chamber andeffective to form a first active deposition precursor species. The firstspecies is flowed to the substrate through at least a portion of arotatable cylindrical mass of a valve assembly effective to form a firstmonolayer on the substrate.

[0050] During the flowing, the flow of substantially all the firstspecies is diverted from entering the deposition chamber with therotatable cylindrical mass, while feeding and maintaining plasmageneration of the first deposition precursor within the remote chamber.While diverting, a purge gas is flowed to the chamber through at least aportion of the rotatable cylindrical mass of the valve assembly whilefeeding and maintaining plasma generation of the first depositionprecursor within the remote chamber. After flowing the purge gas, thecylindrical mass is rotated effective to cease such diverting whilefeeding and maintaining plasma generation of the first depositionprecursor within the chamber, and ultimately, effective to form anothermonolayer on the substrate. An intervening monolayer may or may not beformed. In one implementation, the portion through the rotatablecylindrical mass of the valve assembly through which the first speciesflows is different from the portion through the rotatable cylindricalmass of the valve assembly through which the purge gas flows (forexample, and by way of example only, using the structure of FIGS. 2-5).

[0051] In yet another considered aspect of the invention, a chemicalvapor deposition method is contemplated regardless of remote plasmageneration. In accordance with this aspect of the invention, asemiconductor substrate is positioned within a chemical vapor depositionchamber. A first deposition precursor is fed to the chamber through atleast a portion of a rotatable cylindrical mass of a valve assembly.During the flowing, the flow of at least some of the first depositionprecursor is diverted from entering the deposition chamber by rotatingthe cylindrical mass in a first rotational direction (i.e., rotationaldirection 85 as shown in FIG. 5 if using such apparatus). During thediverting, the cylindrical mass is rotated in the first rotationaldirection effective to cease such diverting (i.e., to place the FIGS.2-5 embodiment in the position depicted by FIGS. 2 and 3 if using suchapparatus). Atomic layer deposition and remote plasma generation withina chamber remote from the deposition chamber are also, of course,contemplated.

[0052] Regardless and in one preferred embodiment, rotation of therotatable cylindrical mass in the first rotational direction ismaintained from the feeding to the diverting to the ceasing of suchdiverting. Such maintaining might be at a variable rate of rotation inthe first rotational direction among the feeding to the diverting to theceasing of said diverting, or might be at a constant rate of rotation.Further and regardless, the invention contemplates in one aspectcontinuing such rotation in the first direction after ceasing effectiveto start said feeding again.

[0053] In compliance with the statute, the invention has been describedin language more or less specific as to structural and methodicalfeatures. It is to be understood, however, that the invention is notlimited to the specific features shown and described, since the meansherein disclosed comprise preferred forms of putting the invention intoeffect. The invention is, therefore, claimed in any of its forms ormodifications within the proper scope of the appended claimsappropriately interpreted in accordance with the doctrine ofequivalents.

1. A chemical vapor deposition method comprising: positioning a semiconductor substrate within a chemical vapor deposition chamber; feeding a first deposition precursor to a remote plasma generation chamber positioned upstream of the deposition chamber and generating a plasma therefrom within the remote chamber and effective to form a first active deposition precursor species, and flowing the first species to the deposition chamber; during the flowing, diverting flow of at least some of the first species from entering the deposition chamber while feeding and maintaining plasma generation of the first deposition precursor within the remote chamber; and ceasing said diverting while feeding and maintaining plasma generation of the first deposition precursor within the remote chamber.
 2. The method of claim 1 wherein the chemical vapor deposition comprises atomic layer deposition.
 3. The method of claim 1 wherein the diverting comprises diverting substantially all flow of the first species from entering the deposition chamber.
 4. The method of claim 1 wherein the flowing of the first species is at subatmospheric pressure and comprises flow into a first passageway inlet, and wherein the diverting comprises flow into a second passageway inlet, and further comprising maintaining pressure of the first inlet and the second inlet within 500 mTorr from one another during the flowing and the diverting.
 5. The method of claim 1 wherein the flowing of the first species is at subatmospheric pressure and comprises flow into a first passageway inlet and wherein the diverting comprises flow into a second passageway inlet, and further comprising maintaining pressure of the first inlet and the second inlet within 100 mTorr from one another during the flowing and the diverting.
 6. The method of claim 1 wherein the flowing of the first species is at subatmospheric pressure and comprises flow into a first passageway inlet, and wherein the diverting comprises flow into a second passageway inlet, and further comprising keeping pressure of the first inlet and the second inlet greater than 500 mTorr from one another during the flowing and the diverting.
 7. The method of claim 1 wherein the diverting comprises diverting substantially all flow of the first species from entering the deposition chamber, and wherein the diverting takes from 0.1 to 1.0 second from starting the diverting of the first species to total diversion of the first species.
 8. The method of claim 1 wherein the diverting comprises diverting substantially all flow of the first species from entering the deposition chamber, and wherein the diverting takes more than 1.0 second from starting the diverting of the first species to total diversion of the first species.
 9. The method of claim 1 wherein said diverting and ceasing thereof is controlled by a single valve assembly located downstream of the remote chamber and upstream of the deposition chamber as respects flow of the first deposition precursor.
 10. The method of claim 1 wherein said diverting comprises rotating a cylindrical valve mass.
 11. The method of claim 1 wherein said diverting comprises rotating a valve plate.
 12. The method of claim 1 wherein said diverting comprises rotating a round valve plate.
 13. The method of claim 1 wherein said diverting comprises rotating a valve plate about a rotation axis oriented generally parallel with respect to a direction of first species flow proximate the valve plate.
 14. The method of claim 1 wherein said ceasing comprises rotating a valve plate about a rotation axis oriented generally parallel with respect to a direction of first species flow proximate the valve plate.
 15. The method of claim 1 wherein said diverting comprises rotating a valve plate in a first rotational direction about a rotation axis oriented generally parallel with respect to a direction of first species flow proximate the valve plate, and wherein said ceasing comprises another rotating of the valve plate in the first rotational direction about said rotation axis.
 16. The method of claim 1 wherein said diverting comprises pivoting a flap.
 17. The method of claim 1 wherein said diverting comprises straight linearly sliding a diverting valve mass.
 18. An atomic layer deposition method comprising: positioning a semiconductor substrate within an atomic layer deposition chamber; feeding a first deposition precursor to a remote plasma generation chamber positioned upstream of the deposition chamber and generating a plasma therefrom within the remote chamber and effective to form a first active deposition precursor species, and flowing the first species to the substrate effective to form a first monolayer on the substrate; during the flowing, diverting flow of substantially all the first species from entering the deposition chamber while feeding and maintaining plasma generation of the first deposition precursor within the remote chamber; while diverting, flowing a purge gas to the chamber while feeding and maintaining plasma generation of the first deposition precursor within the remote chamber; and after flowing the purge gas, ceasing said diverting while feeding and maintaining plasma generation of the first deposition precursor within the remote chamber effective to form another monolayer on the substrate.
 19. The method of claim 18 wherein the flowing of the first species is at subatmospheric pressure and comprises flow into a first passageway inlet, and wherein the diverting comprises flow into a second passageway inlet, and further comprising maintaining pressure of the first inlet and the second inlet within 500 mTorr from one another during the flowing and the diverting.
 20. The method of claim 18 wherein the flowing of the first species is at subatmospheric pressure and comprises flow into a first passageway inlet and wherein the diverting comprises flow into a second passageway inlet, and further comprising maintaining pressure of the first inlet and the second inlet within 100 mTorr from one another during the flowing and the diverting.
 21. The method of claim 18 wherein the flowing of the first species is at subatmospheric pressure and comprises flow into a first passageway inlet, and wherein the diverting comprises flow into a second passageway inlet, and further comprising keeping pressure of the first inlet and the second inlet greater than 500 mTorr from one another during the flowing and the diverting.
 22. The method of claim 18 wherein the diverting takes from 0.1 to 1.0 second from starting the diverting of the first species to total diversion of the first species.
 23. The method of claim 18 wherein the diverting takes more than 1.0 seconds from starting the diverting of the first species to total diversion of the first species.
 24. The method of claim 18 wherein said diverting and ceasing thereof is controlled by a single valve assembly located downstream of the remote chamber and upstream of the deposition chamber as respects flow of the first deposition precursor.
 25. The method of claim 18 wherein said diverting comprises rotating a cylindrical valve mass.
 26. The method of claim 18 wherein said diverting comprises rotating a valve plate.
 27. The method of claim 18 wherein said diverting comprises rotating a round valve plate.
 28. The method of claim 18 wherein said diverting comprises rotating a valve plate about a rotation axis oriented generally parallel with respect to a direction of first species flow proximate the valve plate.
 29. The method of claim 18 wherein said ceasing comprises rotating a valve plate about a rotation axis oriented generally parallel with respect to a direction of first species flow proximate the valve plate.
 30. The method of claim 18 wherein said diverting comprises rotating a valve plate in a first rotational direction about a rotation axis oriented generally parallel with respect to a direction of first species flow proximate the valve plate, and wherein said ceasing comprises another rotating of the valve plate in the first rotational direction about said rotation axis.
 31. The method of claim 18 wherein said diverting comprises pivoting a flap.
 32. The method of claim 18 wherein said diverting comprises straight linearly sliding a diverting valve mass.
 33. An atomic layer deposition method comprising: positioning a semiconductor substrate within an atomic layer deposition chamber; feeding a first deposition precursor to a remote plasma generation chamber positioned upstream of the deposition chamber and generating a plasma therefrom within the remote chamber and effective to form a first active deposition precursor species, and flowing the first species to the substrate effective to form a first monolayer on the substrate; during the flowing, diverting flow of substantially all the first species from entering the deposition chamber while feeding and maintaining plasma generation of the first deposition precursor within the remote chamber; while diverting, flowing a purge gas to the chamber while feeding and maintaining plasma generation of the first deposition precursor within the remote chamber; after flowing the purge gas and while diverting, feeding a second deposition precursor different from the first deposition precursor to the deposition chamber effective to form a second monolayer on the first monolayer and while feeding and maintaining plasma generation of the first deposition precursor within the remote chamber; after forming the second monolayer and while diverting, flowing a purge gas to the chamber while feeding and maintaining plasma generation of the first deposition precursor within the remote chamber; and after flowing purge gas after forming the second monolayer, ceasing said diverting while feeding and maintaining plasma generation of the first deposition precursor within the remote chamber effective to form a third monolayer on the second monolayer.
 34. A chemical vapor deposition method comprising: positioning a semiconductor substrate within a chemical vapor deposition chamber; feeding a first deposition precursor to the chamber through at least a portion of a rotatable cylindrical mass of a valve assembly; during the flowing, diverting flow of at least some of the first deposition precursor from entering the deposition chamber by rotating the cylindrical mass in a first rotational direction; and during the diverting, rotating the cylindrical mass in the first rotational direction effective to cease said diverting.
 35. The method of claim 34 wherein the chemical vapor deposition comprises atomic layer deposition.
 36. The method of claim 34 comprising maintaining rotation of the rotatable cylindrical mass in the first rotational direction from the feeding to the diverting to the ceasing of said diverting.
 37. The method of claim 36 wherein the maintaining is at a variable rate of rotation in the first rotational direction among the feeding to the diverting to the ceasing of said diverting.
 38. The method of claim 34 comprising maintaining a constant rate of rotation of the rotatable cylindrical mass in the first rotational direction from the feeding to the diverting to the ceasing of said diverting.
 39. The method of claim 34 comprising maintaining rotation of the rotatable cylindrical mass in the first rotational direction from the feeding to the diverting to the ceasing of said diverting, and continuing said rotation in the first rotational direction after said ceasing effective to start said feeding again.
 40. The method of claim 34 comprising maintaining a constant rate of rotation of the rotatable cylindrical mass in the first rotational direction from the feeding to the diverting to the ceasing of said diverting, and continuing said rotation at the constant rate in the first rotational direction after said ceasing effective to start said feeding again.
 41. A chemical vapor deposition method comprising: positioning a semiconductor substrate within a chemical vapor deposition chamber; feeding a first deposition precursor to a remote plasma generation chamber positioned upstream of the deposition chamber and generating a plasma therefrom within the remote chamber and effective to form a first active deposition precursor species, and flowing the first species to the deposition chamber through at least a portion of a rotatable cylindrical mass of a valve assembly; during the flowing, diverting flow of at least some of the first species from entering the deposition chamber by rotating the cylindrical mass in a first rotational direction while feeding and maintaining plasma generation of the first deposition precursor within the remote chamber; and during the diverting, rotating the cylindrical mass in the first rotational direction effective to cease said diverting while feeding and maintaining plasma generation of the first deposition precursor within the remote chamber.
 42. The method of claim 41 comprising maintaining rotation of the rotatable cylindrical mass in the first rotational direction from the feeding to the diverting to the ceasing of said diverting.
 43. The method of claim 42 wherein the maintaining is at a variable rate of rotation in the first rotational direction among the feeding to the diverting to the ceasing of said diverting.
 44. The method of claim 41 comprising maintaining a constant rate of rotation of the rotatable cylindrical mass in the first rotational direction from the feeding to the diverting to the ceasing of said diverting.
 45. The method of claim 41 comprising maintaining rotation of the rotatable cylindrical mass in the first rotational direction from the feeding to the diverting to the ceasing of said diverting, and continuing said rotation in the first rotational direction after said ceasing effective to start said feeding again.
 46. The method of claim 41 comprising maintaining a constant rate of rotation of the rotatable cylindrical mass in the first rotational direction from the feeding to the diverting to the ceasing of said diverting, and continuing said rotation in the first rotational direction at the constant rate after said ceasing effective to start said feeding again.
 47. An atomic layer deposition method comprising: positioning a semiconductor substrate within an atomic layer deposition chamber; feeding a first deposition precursor to a remote plasma generation chamber positioned upstream of the deposition chamber and generating a plasma therefrom within the remote chamber and effective to form a first active deposition precursor species, and flowing the first species to the substrate through at least a portion of a rotatable cylindrical mass of a valve assembly effective to form a first monolayer on the substrate; during the flowing, diverting flow of substantially all the first species from entering the deposition chamber with the rotatable cylindrical mass while feeding and maintaining plasma generation of the first deposition precursor within the remote chamber; while diverting, flowing a purge gas to the chamber through at least a portion of the rotatable cylindrical mass of the valve assembly while feeding and maintaining plasma generation of the first deposition precursor within the remote chamber; and after flowing the purge gas, rotating the cylindrical mass effective to cease said diverting while feeding and maintaining plasma generation of the first deposition precursor within the remote chamber effective to form another monolayer on the substrate.
 48. The method of claim 47 wherein the portion through the rotatable cylindrical mass of the valve assembly through which the first species flows is different from the portion through the rotatable cylindrical mass of the valve assembly through which the purge gas flows.
 49. The method of claim 47 comprising maintaining rotation of the rotatable cylindrical mass from the feeding to the diverting to the purge gas flowing to the ceasing of said diverting.
 50. The method of claim 49 wherein the maintaining is at a variable rate of rotation among the feeding to the diverting to the purge gas flowing to the ceasing of said diverting.
 51. The method of claim 47 comprising maintaining a constant rate of rotation of the rotatable cylindrical mass from the feeding to the diverting to the purge gas flowing to the ceasing of said diverting.
 52. The method of claim 41 comprising maintaining rotation of the rotatable cylindrical mass from the feeding to the diverting to the purge gas flowing to the ceasing of said diverting, and continuing said rotation after said ceasing effective to start said feeding again.
 53. The method of claim 41 comprising maintaining a constant rate of rotation of the rotatable cylindrical mass from the feeding to the diverting to the purge gas flowing to the ceasing of said diverting, and continuing said rotation at the constant rate after said ceasing effective to start said feeding again.
 54. A semiconductor processing reactive precursor valve assembly comprising: a valve body having at least one inlet and at least two outlets, the inlet being configured for connection with a reactive precursor source, a first of the outlets being configured for connection with a feed stream to a semiconductor substrate processor chamber, a second of the outlets being configured for diverting precursor flow away from said chamber; the valve body comprising a first fluid passageway therein extending between the inlet and the first outlet, the valve body comprising a second fluid passageway extending between the first fluid passageway and the second outlet; and a control plate mounted for at least limited rotation within the body proximate the first and second passageways, the plate including an arcuate region at least a portion of which is received within the first passageway, the arcuate region including a first region having an opening extending through the plate positionable into a first selected radial orientation to provide the inlet and the first outlet in fluid communication with one another through the first passageway while restricting flow to the second passageway, the arcuate region including a second region positionable into the first radial orientation to provide the inlet and second outlet in fluid communication through the first and second passageways while restricting flow to the first outlet.
 55. The assembly of claim 54 wherein the first passageway extends in a straight axial line through the valve body from the inlet to the first outlet.
 56. The assembly of claim 54 wherein the second passageway extends in a straight axial line through the valve body from the first passageway to the second outlet.
 57. The assembly of claim 54 wherein, the first passageway extends in a first straight axial line through the valve body from the inlet to the first outlet; and the second passageway extends in a second straight axial line through the valve body from the first passageway to the second outlet.
 58. The assembly of claim 57 wherein the first and second axial lines are perpendicular to one another.
 59. The assembly of claim 54 wherein the control plate is circular.
 60. The assembly of claim 54 wherein the control plate is mounted for 360° rotation within the body.
 61. The assembly of claim 54 wherein the arcuate region is an annulus including a plurality of alternating of said first and second regions.
 62. The assembly of claim 54 wherein, the control plate is mounted for 360° rotation within the body; and the arcuate region is an annulus including a plurality of alternating of said first and second regions.
 63. The assembly of claim 62 comprising at least three of said first regions and at least three of said second regions.
 64. The assembly of claim 54 wherein the first region is configured to block substantially all fluid flow to the second passageway when in the first selected radial orientation.
 65. The assembly of claim 54 wherein the second region is configured to block substantially all fluid flow to the first outlet when in the second selected radial orientation.
 66. The assembly of claim 54 wherein the first region plate opening has a maximum cross section which is at least as large as that of the first passageway proximate the control plate.
 67. The assembly of claim 54 wherein the first region plate opening has a cross sectional shape which is the same as that of the first passageway proximate the control plate.
 68. The assembly of claim 54 wherein the first region plate opening has a cross sectional shape which is different from that of the first passageway proximate the control plate.
 69. The assembly of claim 54 wherein the first passageway extends in a straight axial line through the valve body from the inlet to the first outlet, the control plate being mounted for rotation about an axis which is generally parallel with the straight axial line.
 70. The assembly of claim 54 wherein the second region does not include a hole extending through the plate.
 71. The assembly of claim 54 wherein the second region comprises an arcuate surface configured to direct fluid flow 90° from a flow direction to the plate.
 72. The assembly of claim 54 wherein the second region comprises: an arcuate surface configured to direct fluid flow 90° from a flow direction to the plate; and a flat surface connected with the arcuate surface which extends to the second passageway when in the first radial position.
 73. A semiconductor processing reactive precursor valve assembly comprising: a valve body having at least one inlet and at least two outlets, the inlet being configured for connection with a reactive precursor source, a first of the outlets being configured for connection with a feed stream to a semiconductor substrate processor chamber, a second of the outlets being configured for diverting precursor flow away from said chamber; the valve body comprising a first fluid passageway therein extending between the inlet and the first outlet in a first straight axial line, the valve body comprising a second fluid passageway extending between the first fluid passageway and the second outlet in a second straight axial line which is perpendicular to the first straight axial line; and a circular control plate mounted for at least limited rotation within the body proximate the first and second passageways about an axis of rotation which is generally parallel with the first straight axial line, the plate including an arcuate region at least a portion of which is received within the first passageway, the arcuate region including a first region having an opening extending through the plate positionable into a first selected radial orientation to provide the inlet and the first outlet in fluid communication with one another through the first passageway while blocking substantially all fluid flow to the second passageway, the first region plate opening having a maximum cross section which is at least as large as that of the first passageway proximate the control plate, the arcuate region including a second region positionable into the first radial orientation to provide the inlet and the second outlet in fluid communication through the first and second passageway while blocking substantially all flow to the first outlet, the second region comprising an arcuate surface configured to direct fluid flow 90° from a flow direction to the plate, the second region comprising a flat surface connected with the arcuate surface which extends to the second passageway when in the first radial position.
 74. The assembly of claim 73 wherein the control plate is mounted for 360° rotation within the body.
 75. The assembly of claim 73 wherein the arcuate region is an annulus including a plurality of alternating of said first and second regions.
 76. The assembly of claim 73 wherein, the control plate is mounted for 360° rotation within the body; and the arcuate region is an annulus including a plurality of alternating of said first and second regions.
 77. The assembly of claim 76 comprising at least three of said first regions and at least three of said second regions.
 78. A semiconductor processing reactive precursor valve assembly comprising: a valve body having at least one inlet and at least two outlets, the inlet being configured for connection with a reactive precursor source, a first of the outlets being configured for connection with a feed stream to a semiconductor substrate processor chamber, a second of the outlets being configured for diverting precursor flow away from said chamber; the valve body comprising a first fluid passageway therein extending between the inlet and the first outlet, the valve body comprising a second fluid passageway extending between the first fluid passageway and the second outlet; and a generally cylindrical mass mounted for at least limited rotation within the body proximate the first and second passageways, the mass including an arcuate region at least a portion of which is received within the first passageway, the arcuate region including a first region having an opening extending through the mass positionable into a first selected radial orientation to provide the inlet and the first outlet in fluid communication with one another through the first passageway while restricting flow to the second passageway, the arcuate region including a second region positionable into the first radial orientation to provide the inlet and second outlet in fluid communication through the first and second passageways while restricting flow to the first outlet.
 79. The assembly of claim 78 wherein the generally cylindrical mass is mounted for 360° rotation within the body.
 80. A semiconductor processing reactive precursor valve assembly comprising: a valve body having at least first and second inlets and at least two outlets, the first and second inlets being configured for connection with distinct gas sources at least one of which is a deposition precursor, a first of the outlets being configured for connection with a feed stream to a semiconductor substrate processor chamber, a second of the outlets being configured for diverting gas flow away from said chamber; a generally cylindrical mass mounted for at least limited rotation within the body; the generally cylindrical mass comprising a first longitudinal portion configured to provide the first inlet in fluid communication with the first outlet when in a first selected radial orientation and to provide the first inlet in fluid communication with the second outlet when in a second selected radial orientation; and the generally cylindrical mass comprising a second longitudinal portion proximate the first longitudinal portion and which is configured to provide the second inlet in fluid communication with the first outlet when in the second selected radial orientation and to provide the second inlet in fluid communication with the second outlet when in the first selected radial orientation.
 81. The assembly of claim 80 wherein the first and second longitudinal portions are substantial mirror images of one another.
 82. The assembly of claim 80 wherein the generally cylindrical mass comprises two overlapping half cylindrical shaped sections.
 83. The assembly of claim 80 wherein the first longitudinal portion is configured to provide the first inlet in fluid communication with both the first and second outlets when in a third selected radial orientation.
 84. The assembly of claim 83 wherein the first longitudinal portion is configured to provide the first inlet in fluid communication with both the first and second outlets when in a fourth selected radial orientation which is 180° from the third selected radial orientation.
 85. The assembly of claim 80 wherein the second longitudinal portion is configured to provide the second inlet in fluid communication with both the first and second outlets when in a third selected radial orientation.
 86. The assembly of claim 85 wherein the second longitudinal portion is configured to provide the second inlet in fluid communication with both the first and second outlets when in a fourth selected radial orientation which is 180° from the third selected radial orientation.
 87. The assembly of claim 80 wherein the first longitudinal portion is configured to provide the first inlet in fluid communication with both the first and second outlets when in a third selected radial orientation and the second longitudinal portion is configured to provide the second inlet in fluid communication with both the first and second outlets when in the third selected radial orientation.
 88. The assembly of claim 87 wherein the first longitudinal portion is configured to provide the first inlet in fluid communication with both the first and second outlets when in a fourth selected radial orientation which is 180° from the third selected radial orientation and the second longitudinal portion is configured to provide the second inlet in fluid communication with both the first and second outlets when in the fourth selected radial orientation.
 89. The assembly of claim 80 wherein the first and second inlets to the valve body are 180° opposed.
 90. The assembly of claim 80 wherein the first and second outlets from the valve body are 180° opposed.
 91. The assembly of claim 80 wherein, the first and second inlets to the valve body are 180° opposed; and the first and second outlets from the valve body are 180° opposed.
 92. The assembly of claim 80 wherein at least one inlet to the valve body is oriented at 90° from at least one outlet from the body.
 93. The assembly of claim 80 wherein, the first and second inlets to the valve body are 180° opposed; the first and second outlets from the valve body are 180° opposed; and the first and second inlets to the valve body are oriented at 90° from the first and second outlets from the body. 